Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulations

Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulations

10.1109/TED.2009.2016396

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Bibliographic Details
Main Authors: Zhao, H., Rustagi, S.C., Ma, F.-J., Samudra, G.S., Singh, N., Lo, G.Q., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Charge-based capacitance measurement (CBCM) technique
Nanoscale devices
Nanowire MOSFETs
Sub-femtofarad capacitance measurements
Transient TCAD simulations
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55287
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/55287

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