Three-port RF characterization of MOS transistors

Three-port RF characterization of MOS transistors

10.1109/ARFTGS.2005.1500569

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Bibliographic Details
Main Authors: Mahalingam, U., Rustagi, S.C., Samudra, G.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Admittance matrix
Capacitance
Impedance
Inductance
Modeling
MOSFETs
Scattering parameters measurement
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84307
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84307

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