Three-port RF characterization of MOS transistors

Three-port RF characterization of MOS transistors

10.1109/ARFTGS.2005.1500569

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書目詳細資料
Main Authors:	Mahalingam, U., Rustagi, S.C., Samudra, G.S.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
主題:	Admittance matrix Capacitance Impedance Inductance Modeling MOSFETs Scattering parameters measurement
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/84307
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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