Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement

Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement

10.1109/LED.2006.881083

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Bibliographic Details
Main Authors: Chui, K.-J., Ang, K.-W., Chin, H.-C., Shen, C., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.F., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
nMOSFET
Silicon-carbon
Tensile-strained
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83088
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83088

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