Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement

Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement

10.1109/LED.2006.881083

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Bibliographic Details
Main Authors:	Chui, K.-J., Ang, K.-W., Chin, H.-C., Shen, C., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.F., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	nMOSFET Silicon-carbon Tensile-strained
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83088
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Institution:	National University of Singapore

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