Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions

Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions

10.1109/TED.2007.906941

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Bibliographic Details
Main Authors: Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Lateral tensile strain
N-MOSFET
Silicon-carbon (Si1-yCy)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82872
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82872

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