Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions

10.1109/TED.2007.906941

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Bibliographic Details
Main Authors:	Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Lateral tensile strain N-MOSFET Silicon-carbon (Si1-yCy)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82872
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82872
record_format	dspace
spelling	sg-nus-scholar.10635-828722023-10-30T20:19:09Z Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions Ang, K.-W. Chui, K.-J. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Lateral tensile strain N-MOSFET Silicon-carbon (Si1-yCy) 10.1109/TED.2007.906941 IEEE Transactions on Electron Devices 54 11 2910-2917 IETDA 2014-10-07T04:34:30Z 2014-10-07T04:34:30Z 2007-11 Article Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007-11). Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions. IEEE Transactions on Electron Devices 54 (11) : 2910-2917. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.906941 00189383 http://scholarbank.nus.edu.sg/handle/10635/82872 000250590200014 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Lateral tensile strain N-MOSFET Silicon-carbon (Si1-yCy)
spellingShingle	Lateral tensile strain N-MOSFET Silicon-carbon (Si1-yCy) Ang, K.-W. Chui, K.-J. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions
description	10.1109/TED.2007.906941
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ang, K.-W. Chui, K.-J. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Ang, K.-W. Chui, K.-J. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
author_sort	Ang, K.-W.
title	Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions
title_short	Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions
title_full	Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions
title_fullStr	Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions
title_full_unstemmed	Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions
title_sort	performance enhancement in uniaxial strained silicon-on-insulator n-mosfets featuring silicon-carbon source/drain regions
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82872
_version_	1781784241813585920

Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions

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