STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology

by Phua, W.H.T., Ang, D.S., Ling, C.H., Chui, K.J.
Published 2014

Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors

by Ang, K.-W., Chui, K.-J., Tung, C.-H., Samudra, G., Balasubramanian, N., Yeo, Y.-C.
Published 2014

Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions

by Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport

by Chui, K.-J., Ang, K.-W., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
Published 2014

Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions

by Ang, K.-W., Chin, H.-C., Chui, K.-J., Li, M.-F., Samudra, G., Yeo, Y.-C.
Published 2014

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions

by Ang, K.-W., Chin, H.-C., Chui, K.-J., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
Published 2014

Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner

by Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
Published 2014

Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

by Ang, K.W., Chui, K.J., Bliznetsov, V., Du, A., Balasubramanian, N., Li, M.F., Samudra, G., Yeo, Y.-C.
Published 2014

SDODEL MOSFET for performance enhancement

by Chui, K.J., Samudra, G.S., Yeo, Y.-C., Tee, K.-C., Leong, K.-W., Tee, K.M., Benistant, F., Chan, L.
Published 2014

Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors

by Ang, K.-W., Wan, C., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G., Yeo, Y.-C.
Published 2014

Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressors

by Ang, K.-W., Chui, K.-J., Bliznetsov, V., Tung, C.-H., Du, A., Balasubramanian, N., Samudra, G., Li, M.F., Yeo, Y.-C.
Published 2014

Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors

by Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yoo, W.-J., Yeo, Y.-C.
Published 2014

Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance

by Ang, K.-W., Chui, K.-J., Madan, A., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
Published 2014

Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain

by Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Ang, K.-W., Chui, K.-J., Guo, Q.-L., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement

by Ang, K.-W., Chui, K.-J., Bliznetsov, V., Wang, Y., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G., Yeo, Y.-C.
Published 2014

50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner

by Ang, K.-W., Chui, K.-J., Chin, H.-C., Foo, Y.-L., Du, A., Deng, W., Li, M.-F., Samudra, G., Balasubramanian, N., Yeo, Y.-C.
Published 2014

Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement

by Chui, K.-J., Ang, K.-W., Chin, H.-C., Shen, C., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.F., Samudra, G.S., Yeo, Y.-C.
Published 2014

Source/drain germanium condensation for P-channel strained ultra-thin body transistors

by Chui, K.-J., Ang, K.-W., Madan, A., Wang, H., Tung, C.-H., Wong, L.-Y., Wang, Y., Choy, S.-F., Balasubramanian, N., Li, M.F., Samudra, G., Yeo, Y.-C.
Published 2014