Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement

Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement

Technical Digest - International Electron Devices Meeting, IEDM

Saved in:
Bibliographic Details
Main Authors: Ang, K.-W., Chui, K.-J., Bliznetsov, V., Wang, Y., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84304
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84304

Similar Items