Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement

Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors:	Ang, K.-W., Chui, K.-J., Bliznetsov, V., Wang, Y., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84304
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Institution:	National University of Singapore

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