Study of erbium disilicide and its application in Schottky source/drain silicon nanowire MOSFETs

• Main Author: Tan, Eu Jin
• Other Authors: Chi Dongzhi
• Format: Theses and Dissertations
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: https://hdl.handle.net/10356/42236
• Institution: Nanyang Technological University

For ideal scaling, per generation (~3 years), a O.7x reduction in Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dimensions is necessary to produce circuits with increased performance at reduced cost. 2 particular scaling factors to consider are : (1) source/drain (S/D) scaling which lea...