Study of erbium disilicide and its application in Schottky source/drain silicon nanowire MOSFETs

• 主要作者: Tan, Eu Jin
• 其他作者: Chi Dongzhi
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2010
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• 在線閱讀: https://hdl.handle.net/10356/42236

For ideal scaling, per generation (~3 years), a O.7x reduction in Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dimensions is necessary to produce circuits with increased performance at reduced cost. 2 particular scaling factors to consider are : (1) source/drain (S/D) scaling which lea...