Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel

• Main Authors: Cui, Guangda, Lee, Pooi See, Chi, Dong Zhi, Chin, Yoke King, Hoe, Keat Mun, Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Lo, Guo-Qiang
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/90576; http://hdl.handle.net/10220/8343
• Institution: Nanyang Technological University

We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source/drain back-gated architecture. Although the subthreshold swing (~180 mV/dec) and drain-induced barrier lowering (~500 mV/V) are high due thick BOX as gate oxide, the fabricated Schottky t...