Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing

by Setiawan, Y., Tan, Eu Jin, Pey, Kin Leong, Chi, Dong Zhi, Lee, Pooi See, Hoe, Keat Mun
Published 2012

Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors

by Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Chi, Dong Zhi, Lo, Guo-Qiang, Lee, Pooi See, Hoe, Keat Mun, Chin, Yoke King, Cui, Guangda
Published 2013

Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel

by Cui, Guangda, Lee, Pooi See, Chi, Dong Zhi, Chin, Yoke King, Hoe, Keat Mun, Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Lo, Guo-Qiang
Published 2012