Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels

• Main Authors: Tang, L. J., Ho, C. K. F., Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Lo, Guo-Qiang, Chi, Dong Zhi, Chin, Yoke King, Lee, Pooi See
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Materials
• 在線閱讀: https://hdl.handle.net/10356/90670; http://hdl.handle.net/10220/8344
• 機構: Nanyang Technological University

We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. The transistors exhibit good Ion/Ioff characteristics, along with fully controlled shortchannel...