Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors

Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors

10.1063/1.2973211

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Bibliographic Details
Main Authors: Peng, J.W., Lee, S.J., Liang, G.C.A., Singh, N., Zhu, S.Y., Lo, G.Q., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56272
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/56272

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