Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors

Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors

10.1063/1.2973211

Saved in:

Bibliographic Details
Main Authors:	Peng, J.W., Lee, S.J., Liang, G.C.A., Singh, N., Zhu, S.Y., Lo, G.Q., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56272
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels
by: Tang, L. J., et al.
Published: (2012)

Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts
by: Jiang, Y., et al.
Published: (2014)

Temperature dependence of carrier transport of a silicon nanowire schottky-barrier field-effect transistor
by: Yang, W.F., et al.
Published: (2014)

Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor
by: Singh, Pushpapraj, et al.
Published: (2013)

CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack
by: Peng, J.W., et al.
Published: (2014)

Si-nanowire based gate-all-around nonvolatile SONOS memory cell
by: Fu, J., et al.
Published: (2014)

Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport
by: Zhao, H., et al.
Published: (2014)

Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture
by: Fu, J., et al.
Published: (2014)

Trap layer engineered gate-all-around vertically stacked twin Si -nanowire nonvolatile memory
by: Fu, J., et al.
Published: (2014)

Structure effects in the gate-all-around silicon nanowire MOSFETs
by: Liang, G.
Published: (2014)

Gate-all-around silicon nanowire FET modeling
by: Chen, Xiangchen
Published: (2014)

Compact modeling of gate-all-around silicon nanowire MOSFETs
by: Lin Shihuan
Published: (2012)

Schottky-barrier si nanowire mosfet: Effects of source/drain metals and gate dielectrics
by: Yang, W., et al.
Published: (2014)

Nanowire FETs for Low Power CMOS Applications Featuring Novel Gate-All-Around Single Metal FUSI Gates with Dual φ m and v T Tune-ability
by: Jiang, Y., et al.
Published: (2014)

Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel
by: Cui, Guangda, et al.
Published: (2012)

New developments in Schottky source/drain high-k/metal gate CMOS transistors
by: Li, M.-F., et al.
Published: (2014)

Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
by: Zhu, S., et al.
Published: (2014)

Schottky barrier engineering on dopant-segregated schottky silicon nanowire MOSFETs
by: Chin, Yoke King
Published: (2013)

Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate
by: Zhu, S., et al.
Published: (2014)

Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate
by: Zhu, S., et al.
Published: (2014)

Gate-all-around nanowire FET sensors with ultrahigh sensitivity and low noise
by: Pushpapraj Singh
Published: (2012)

Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory
by: Fu, J., et al.
Published: (2014)

Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons
by: Chin, S.K., et al.
Published: (2014)

Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons
by: Chin, S.K., et al.
Published: (2014)

Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width
by: Kang, Yuye, et al.
Published: (2022)

Ultra-narrow silicon nanowire gate-all-around CMOS devices: Impact of diameter, channel-orientation and low temperature on device performance
by: Singh, N., et al.
Published: (2014)

Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostucture
by: Wong, H.-S., et al.
Published: (2014)

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
by: Zhu, S., et al.
Published: (2014)

Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier
by: Ling, Z.-P, et al.
Published: (2020)

A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications
by: Wang, T., et al.
Published: (2014)

Schottky barrier engineering for contact resistance reduction in nanoscale CMOS transistors
by: MANTAVYA SINHA
Published: (2010)

Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology
by: Gong, X., et al.
Published: (2014)

Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology
by: Li, R., et al.
Published: (2014)

Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics
by: RAMANATHAN GANDHI
Published: (2012)

Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors
by: Agrawal, N., et al.
Published: (2014)

Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoid
by: Cha, C.-L., et al.
Published: (2014)

Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body
by: Lim, Y.F., et al.
Published: (2014)

Dual-gate all-electrical valleytronic transistors
by: Lai, Shen, et al.
Published: (2023)

Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate
by: Zhu, S., et al.
Published: (2014)

Schottky source/drain transistor on thin SiGe on insulator integrated with HfO2/TaN gate stack
by: Gao, F., et al.
Published: (2014)