Dual-gate all-electrical valleytronic transistors
The development of integrated circuits (ICs) based on a complementary metal−oxide−semiconductor through transistor scaling has reached the technology bottleneck; thus, alternative approaches from new physical mechanisms are highly demanded. Valleytronics in two-dimensional (2D) material systems h...
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Main Authors: | , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2023
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/166606 |
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Institution: | Nanyang Technological University |
Language: | English |