Dual-gate all-electrical valleytronic transistors

The development of integrated circuits (ICs) based on a complementary metal−oxide−semiconductor through transistor scaling has reached the technology bottleneck; thus, alternative approaches from new physical mechanisms are highly demanded. Valleytronics in two-dimensional (2D) material systems h...

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Bibliographic Details
Main Authors: Lai, Shen, Zhang, Zhaowei, Wang, Naizhou, Abdullah Rasmita, Deng, Ya, Liu, Zheng, Gao, Weibo
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2023
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Online Access:https://hdl.handle.net/10356/166606
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Institution: Nanyang Technological University
Language: English

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