Nanowire FETs for Low Power CMOS Applications Featuring Novel Gate-All-Around Single Metal FUSI Gates with Dual φ m and v T Tune-ability

Nanowire FETs for Low Power CMOS Applications Featuring Novel Gate-All-Around Single Metal FUSI Gates with Dual φ m and v T Tune-ability

10.1109/IEDM.2008.4796836

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Bibliographic Details
Main Authors: Jiang, Y., Liow, T.Y., Singh, N., Tan, L.H., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84000
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/84000

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