Nanowire FETs for Low Power CMOS Applications Featuring Novel Gate-All-Around Single Metal FUSI Gates with Dual φ m and v T Tune-ability

• Main Authors: Jiang, Y., Liow, T.Y., Singh, N., Tan, L.H., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84000
• Institution: National University of Singapore

10.1109/IEDM.2008.4796836