Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport

Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport

10.1109/IEDM.2008.4796810

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Bibliographic Details
Main Authors: Zhao, H., Rustagi, S.C., Singh, N., Ma, F.-J., Samudra, G.S., Budhaaraju, K.D., Manhas, S.K., Tung, C.H., Lo, G.Q., Baccarani, G., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71895
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/71895

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