Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels

by Ma, F.-J., Rustagi, S.C., Zhao, H., Samudra, G.S., Singh, N., Budhaaraju, K.D., Lo, G.Q., Kwong, D.L.
Published 2014

Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport

by Zhao, H., Rustagi, S.C., Singh, N., Ma, F.-J., Samudra, G.S., Budhaaraju, K.D., Manhas, S.K., Tung, C.H., Lo, G.Q., Baccarani, G., Kwong, D.L.
Published 2014