Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport
10.1109/IEDM.2008.4796810
Saved in:
Main Authors: | Zhao, H., Rustagi, S.C., Singh, N., Ma, F.-J., Samudra, G.S., Budhaaraju, K.D., Manhas, S.K., Tung, C.H., Lo, G.Q., Baccarani, G., Kwong, D.L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/71895 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons
by: Chin, S.K., et al.
Published: (2014) -
Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons
by: Chin, S.K., et al.
Published: (2014) -
Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostucture
by: Wong, H.-S., et al.
Published: (2014) -
Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts
by: Jiang, Y., et al.
Published: (2014) -
Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors
by: Peng, J.W., et al.
Published: (2014)