Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance

Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance

10.1109/ISDRS.2007.4422253

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Shen, C., Zhu, M., Chan, L., Heng, C.-H., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71771
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/71771

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