Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing

Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing

10.1109/IEDM.2007.4418900

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Zhu, M., Shen, C., Chan, L., Lo, G.-Q., Tung, C.-H., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70531
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/70531

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