Simulation and design of a germanium L-shaped impact-ionization MOS transistor
10.1088/0268-1242/23/1/015012
Saved in:
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
2014
|
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83025 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |