Simulation and design of a germanium L-shaped impact-ionization MOS transistor

10.1088/0268-1242/23/1/015012

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Main Authors:	Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83025
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83025
record_format	dspace
spelling	sg-nus-scholar.10635-830252023-10-30T07:10:30Z Simulation and design of a germanium L-shaped impact-ionization MOS transistor Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1088/0268-1242/23/1/015012 Semiconductor Science and Technology 23 1 - SSTEE 2014-10-07T04:36:20Z 2014-10-07T04:36:20Z 2008-01-01 Article Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C. (2008-01-01). Simulation and design of a germanium L-shaped impact-ionization MOS transistor. Semiconductor Science and Technology 23 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/23/1/015012 02681242 http://scholarbank.nus.edu.sg/handle/10635/83025 000253279700012 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1088/0268-1242/23/1/015012
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C.
format	Article
author	Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C.
spellingShingle	Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C. Simulation and design of a germanium L-shaped impact-ionization MOS transistor
author_sort	Toh, E.-H.
title	Simulation and design of a germanium L-shaped impact-ionization MOS transistor
title_short	Simulation and design of a germanium L-shaped impact-ionization MOS transistor
title_full	Simulation and design of a germanium L-shaped impact-ionization MOS transistor
title_fullStr	Simulation and design of a germanium L-shaped impact-ionization MOS transistor
title_full_unstemmed	Simulation and design of a germanium L-shaped impact-ionization MOS transistor
title_sort	simulation and design of a germanium l-shaped impact-ionization mos transistor
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83025
_version_	1781784278031400960

Simulation and design of a germanium L-shaped impact-ionization MOS transistor

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