Simulation and design of a germanium L-shaped impact-ionization MOS transistor

10.1088/0268-1242/23/1/015012

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83025
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Institution: National University of Singapore
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Summary:10.1088/0268-1242/23/1/015012