Simulation and design of a germanium L-shaped impact-ionization MOS transistor

10.1088/0268-1242/23/1/015012

Saved in:

Bibliographic Details
Main Authors:	Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83025
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Description
Summary:	10.1088/0268-1242/23/1/015012

Similar Items