Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing

10.1109/IEDM.2007.4418900

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Bibliographic Details
Main Authors:	Toh, E.-H., Wang, G.H., Zhu, M., Shen, C., Chan, L., Lo, G.-Q., Tung, C.-H., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70531
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-70531
record_format	dspace
spelling	sg-nus-scholar.10635-705312024-11-12T21:44:07Z Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing Toh, E.-H. Wang, G.H. Zhu, M. Shen, C. Chan, L. Lo, G.-Q. Tung, C.-H. Sylvester, D. Heng, C.-H. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING NUS NANOSCIENCE & NANOTECH INITIATIVE 10.1109/IEDM.2007.4418900 Technical Digest - International Electron Devices Meeting, IEDM 195-198 TDIMD 2014-06-19T03:13:13Z 2014-06-19T03:13:13Z 2007 Conference Paper Toh, E.-H., Wang, G.H., Zhu, M., Shen, C., Chan, L., Lo, G.-Q., Tung, C.-H., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C. (2007). Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing. Technical Digest - International Electron Devices Meeting, IEDM : 195-198. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418900 01631918 http://scholarbank.nus.edu.sg/handle/10635/70531 000259347800042 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/IEDM.2007.4418900
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Toh, E.-H. Wang, G.H. Zhu, M. Shen, C. Chan, L. Lo, G.-Q. Tung, C.-H. Sylvester, D. Heng, C.-H. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Toh, E.-H. Wang, G.H. Zhu, M. Shen, C. Chan, L. Lo, G.-Q. Tung, C.-H. Sylvester, D. Heng, C.-H. Samudra, G. Yeo, Y.-C.
spellingShingle	Toh, E.-H. Wang, G.H. Zhu, M. Shen, C. Chan, L. Lo, G.-Q. Tung, C.-H. Sylvester, D. Heng, C.-H. Samudra, G. Yeo, Y.-C. Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing
author_sort	Toh, E.-H.
title	Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing
title_short	Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing
title_full	Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing
title_fullStr	Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing
title_full_unstemmed	Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing
title_sort	impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mv/decade subtheshold swing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/70531
_version_	1821190251005083648

Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing

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