Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport

10.1109/IEDM.2008.4796810

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Main Authors:	Zhao, H., Rustagi, S.C., Singh, N., Ma, F.-J., Samudra, G.S., Budhaaraju, K.D., Manhas, S.K., Tung, C.H., Lo, G.Q., Baccarani, G., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/71895
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-71895
record_format	dspace
spelling	sg-nus-scholar.10635-718952015-01-30T21:17:13Z Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport Zhao, H. Rustagi, S.C. Singh, N. Ma, F.-J. Samudra, G.S. Budhaaraju, K.D. Manhas, S.K. Tung, C.H. Lo, G.Q. Baccarani, G. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2008.4796810 Technical Digest - International Electron Devices Meeting, IEDM - TDIMD 2014-06-19T03:29:04Z 2014-06-19T03:29:04Z 2008 Conference Paper Zhao, H.,Rustagi, S.C.,Singh, N.,Ma, F.-J.,Samudra, G.S.,Budhaaraju, K.D.,Manhas, S.K.,Tung, C.H.,Lo, G.Q.,Baccarani, G.,Kwong, D.L. (2008). Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2008.4796810" target="_blank">https://doi.org/10.1109/IEDM.2008.4796810</a> 9781424423781 01631918 http://scholarbank.nus.edu.sg/handle/10635/71895 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/IEDM.2008.4796810
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhao, H. Rustagi, S.C. Singh, N. Ma, F.-J. Samudra, G.S. Budhaaraju, K.D. Manhas, S.K. Tung, C.H. Lo, G.Q. Baccarani, G. Kwong, D.L.
format	Conference or Workshop Item
author	Zhao, H. Rustagi, S.C. Singh, N. Ma, F.-J. Samudra, G.S. Budhaaraju, K.D. Manhas, S.K. Tung, C.H. Lo, G.Q. Baccarani, G. Kwong, D.L.
spellingShingle	Zhao, H. Rustagi, S.C. Singh, N. Ma, F.-J. Samudra, G.S. Budhaaraju, K.D. Manhas, S.K. Tung, C.H. Lo, G.Q. Baccarani, G. Kwong, D.L. Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport
author_sort	Zhao, H.
title	Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport
title_short	Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport
title_full	Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport
title_fullStr	Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport
title_full_unstemmed	Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport
title_sort	sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/71895
_version_	1681087466971332608

Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport

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