Multifingers capacitances modeling of 65-Nm CMOS transistor by unit cell method
The multifingers' parasitic capacitances modeling of 65-nm CMOS transistors for millimeter-wave application is presented. The modeling is based on simulation approach, which is done by building the devices true dimension in high-frequency structure simulator environment. The material properties...
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Main Authors: | , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/102842 http://hdl.handle.net/10220/16915 |
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Institution: | Nanyang Technological University |
Language: | English |