Multifingers capacitances modeling of 65-Nm CMOS transistor by unit cell method

The multifingers' parasitic capacitances modeling of 65-nm CMOS transistors for millimeter-wave application is presented. The modeling is based on simulation approach, which is done by building the devices true dimension in high-frequency structure simulator environment. The material properties...

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Main Authors: Agung, Alit Apriyana Anak, Zhang, Yue Ping
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2013
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在線閱讀:https://hdl.handle.net/10356/102842
http://hdl.handle.net/10220/16915
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機構: Nanyang Technological University
語言: English