Multifingers capacitances modeling of 65-Nm CMOS transistor by unit cell method
The multifingers' parasitic capacitances modeling of 65-nm CMOS transistors for millimeter-wave application is presented. The modeling is based on simulation approach, which is done by building the devices true dimension in high-frequency structure simulator environment. The material properties...
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Main Authors: | , |
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格式: | Article |
語言: | English |
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2013
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在線閱讀: | https://hdl.handle.net/10356/102842 http://hdl.handle.net/10220/16915 |
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機構: | Nanyang Technological University |
語言: | English |