Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process

• Main Authors: Jiang, Jize, Shu, Wei, Chong, Kwen-Siong, Lin, Tong, Lwin, Ne Kyaw Zwa, Chang, Joseph Sylvester, Liu, Jingyuan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2016
• Subjects: MOSFET; Leakage currents
• Online Access: https://hdl.handle.net/10356/80395; http://hdl.handle.net/10220/41417
• Institution: Nanyang Technological University

Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are re...