Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process

Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process

Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are re...

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Bibliographic Details
Main Authors: Jiang, Jize, Shu, Wei, Chong, Kwen-Siong, Lin, Tong, Lwin, Ne Kyaw Zwa, Chang, Joseph Sylvester, Liu, Jingyuan
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2016
Subjects:
MOSFET
Leakage currents
Online Access:https://hdl.handle.net/10356/80395
http://hdl.handle.net/10220/41417
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Institution: Nanyang Technological University
Language: English
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Summary:Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended.

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