Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process

Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process

Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are re...

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Main Authors: Jiang, Jize, Shu, Wei, Chong, Kwen-Siong, Lin, Tong, Lwin, Ne Kyaw Zwa, Chang, Joseph Sylvester, Liu, Jingyuan
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2016
Subjects:
MOSFET
Leakage currents
Online Access:https://hdl.handle.net/10356/80395
http://hdl.handle.net/10220/41417
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-803952020-09-26T22:15:48Z Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process Jiang, Jize Shu, Wei Chong, Kwen-Siong Lin, Tong Lwin, Ne Kyaw Zwa Chang, Joseph Sylvester Liu, Jingyuan School of Electrical and Electronic Engineering 2016 IEEE International Symposium on Circuits and Systems (ISCAS) Temasek Laboratories MOSFET Leakage currents Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended. Accepted version 2016-09-02T07:00:04Z 2019-12-06T13:48:30Z 2016-09-02T07:00:04Z 2019-12-06T13:48:30Z 2016 2016 Conference Paper Jiang, J., Shu, W., Chong, K.-S., Lin, T., Lwin, N. K. Z., Chang, J. S., et al. (2016). Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process. 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 6-8. https://hdl.handle.net/10356/80395 http://hdl.handle.net/10220/41417 10.1109/ISCAS.2016.7527156 192455 en © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/ISCAS.2016.7527156. 4 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic MOSFET
Leakage currents
spellingShingle MOSFET
Leakage currents
Jiang, Jize
Shu, Wei
Chong, Kwen-Siong
Lin, Tong
Lwin, Ne Kyaw Zwa
Chang, Joseph Sylvester
Liu, Jingyuan
Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process
description Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Jiang, Jize
Shu, Wei
Chong, Kwen-Siong
Lin, Tong
Lwin, Ne Kyaw Zwa
Chang, Joseph Sylvester
Liu, Jingyuan
format Conference or Workshop Item
author Jiang, Jize
Shu, Wei
Chong, Kwen-Siong
Lin, Tong
Lwin, Ne Kyaw Zwa
Chang, Joseph Sylvester
Liu, Jingyuan
author_sort Jiang, Jize
title Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process
title_short Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process
title_full Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process
title_fullStr Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process
title_full_unstemmed Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process
title_sort total ionizing dose (tid) effects on finger transistors in a 65nm cmos process
publishDate 2016
url https://hdl.handle.net/10356/80395
http://hdl.handle.net/10220/41417
_version_ 1681058340359110656

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