Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor

• Main Authors: Singh, Pushpapraj, Park, Woo-Tae, Miao, Jianmin, Shao, Lichun, Kotlanka, Rama Krishna, Kwong, Dim Lee
• Other Authors: School of Mechanical and Aerospace Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Science::Physics::Electricity and magnetism
• Online Access: https://hdl.handle.net/10356/95436; http://hdl.handle.net/10220/9256
• Institution: Nanyang Technological University

The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. With narrow gate bias span of 0.6 V near threshold region, the piezoresistive coefficient of NWFET enhances up to seven times from 29 × 10−11 Pa−1 to 207 × 10−...