Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor
The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. With narrow gate bias span of 0.6 V near threshold region, the piezoresistive coefficient of NWFET enhances up to seven times from 29 × 10−11 Pa−1 to 207 × 10−...
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sg-ntu-dr.10356-954362023-03-04T17:17:45Z Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor Singh, Pushpapraj Park, Woo-Tae Miao, Jianmin Shao, Lichun Kotlanka, Rama Krishna Kwong, Dim Lee School of Mechanical and Aerospace Engineering DRNTU::Science::Physics::Electricity and magnetism The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. With narrow gate bias span of 0.6 V near threshold region, the piezoresistive coefficient of NWFET enhances up to seven times from 29 × 10−11 Pa−1 to 207 × 10−11 Pa−1 under compressive and tensile strain conditions. Results reveal that the low frequency noise is reduced when operated in subthreshold region. The higher piezoresistive coefficient and reduced noise improve the sensor resolution (minimum detectable strain) by sixteen times. NWFET operates at low bias with higher piezoresistance and signal-to-noise ratio and offers promising applications in strain sensors. Published version 2013-02-26T06:34:02Z 2019-12-06T19:14:49Z 2013-02-26T06:34:02Z 2019-12-06T19:14:49Z 2012 2012 Journal Article Singh, P., Park, W.- T., Miao, J., Shao, L., Kotlanka, R. K., & Kwong, D. L. (2012). Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor. Applied physics letters, 100(6), 063106. 0003-6951 https://hdl.handle.net/10356/95436 http://hdl.handle.net/10220/9256 10.1063/1.3683516 en Applied physics letters © 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3683516]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
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DRNTU::Science::Physics::Electricity and magnetism Singh, Pushpapraj Park, Woo-Tae Miao, Jianmin Shao, Lichun Kotlanka, Rama Krishna Kwong, Dim Lee Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor |
| description |
The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. With narrow gate bias span of 0.6 V near threshold region, the piezoresistive coefficient of NWFET enhances up to seven times from 29 × 10−11 Pa−1 to 207 × 10−11 Pa−1 under compressive and tensile strain conditions. Results reveal that the low frequency noise is reduced when operated in subthreshold region. The higher piezoresistive coefficient and reduced noise improve the sensor resolution (minimum detectable strain) by sixteen times. NWFET operates at low bias with higher piezoresistance and signal-to-noise ratio and offers promising applications in strain sensors. |
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School of Mechanical and Aerospace Engineering |
| author_facet |
School of Mechanical and Aerospace Engineering Singh, Pushpapraj Park, Woo-Tae Miao, Jianmin Shao, Lichun Kotlanka, Rama Krishna Kwong, Dim Lee |
| format |
Article |
| author |
Singh, Pushpapraj Park, Woo-Tae Miao, Jianmin Shao, Lichun Kotlanka, Rama Krishna Kwong, Dim Lee |
| author_sort |
Singh, Pushpapraj |
| title |
Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor |
| title_short |
Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor |
| title_full |
Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor |
| title_fullStr |
Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor |
| title_full_unstemmed |
Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor |
| title_sort |
tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor |
| publishDate |
2013 |
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https://hdl.handle.net/10356/95436 http://hdl.handle.net/10220/9256 |
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1759852975025553408 |