Piezoresistive sensing performance of junctionless nanowire FET

This letter investigates junctionless nanowire field-effect transistor (NWFET) (JL-NWFET) parameters such as piezoresistance and low-frequency noise (LFN) with respect to channel doping and gate bias. The JL-NWFET is piezoresistive, and its gauge factor (GF ) is increased from 24 to 47 by reducing t...

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Main Authors: Singh, Pushpapraj, Miao, Jianmin, Pott, Vincent, Park, Woo-Tae, Kwong, Dim Lee
其他作者: School of Mechanical and Aerospace Engineering
格式: Article
語言:English
出版: 2013
主題:
在線閱讀:https://hdl.handle.net/10356/97805
http://hdl.handle.net/10220/11345
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