Piezoresistive sensing performance of junctionless nanowire FET

This letter investigates junctionless nanowire field-effect transistor (NWFET) (JL-NWFET) parameters such as piezoresistance and low-frequency noise (LFN) with respect to channel doping and gate bias. The JL-NWFET is piezoresistive, and its gauge factor (GF ) is increased from 24 to 47 by reducing t...

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Bibliographic Details
Main Authors: Singh, Pushpapraj, Miao, Jianmin, Pott, Vincent, Park, Woo-Tae, Kwong, Dim Lee
Other Authors: School of Mechanical and Aerospace Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/97805
http://hdl.handle.net/10220/11345
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Institution: Nanyang Technological University
Language: English

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