Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors

Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless (JL) double-gate (DG) field-effect transistors (FET) are presented. A regional method is used to solve the Poisson equation under different gate biases, and the electric potential is obtain...

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Bibliographic Details
Main Authors: Ding, Zhihao, Hu, Guangxi, Liu, Ran, Wang, Lingli, Hu, Shuyan, Zhou, Xing
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/98589
http://hdl.handle.net/10220/17701
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Institution: Nanyang Technological University
Language: English