Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors

• Main Authors: Ding, Zhihao, Hu, Guangxi, Liu, Ran, Wang, Lingli, Hu, Shuyan, Zhou, Xing
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98589; http://hdl.handle.net/10220/17701
• Institution: Nanyang Technological University

Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless (JL) double-gate (DG) field-effect transistors (FET) are presented. A regional method is used to solve the Poisson equation under different gate biases, and the electric potential is obtained. With the potential model, an analytical expression for the threshold voltage is achieved. An expression for the drain current is derived from the potential model. The analytical results are compared with simulations, and excellent agreements are observed. The models accurately describe the characteristics of JLDG FETs, and they are very helpful for the design and optimization of devices.