Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors

• Main Authors: Ding, Zhihao, Hu, Guangxi, Liu, Ran, Wang, Lingli, Hu, Shuyan, Zhou, Xing
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98589; http://hdl.handle.net/10220/17701
• Institution: Nanyang Technological University

Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless (JL) double-gate (DG) field-effect transistors (FET) are presented. A regional method is used to solve the Poisson equation under different gate biases, and the electric potential is obtain...