Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length

• Main Authors: Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Wong, H.-S., Lim, P.-C., Lai, D.M.Y., Lo, G.-Q., Tung, C.-H., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84020
• Institution: National University of Singapore

10.1109/IEDM.2006.346915