Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement

• Main Authors: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Du, A., Tung, C.-H., Samudra, G.S., Yoo, W.-J., Balasubramanian, N., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84233
• Institution: National University of Singapore

Digest of Technical Papers - Symposium on VLSI Technology