Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement

Digest of Technical Papers - Symposium on VLSI Technology

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Main Authors:	Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Du, A., Tung, C.-H., Samudra, G.S., Yoo, W.-J., Balasubramanian, N., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84233
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84233
record_format	dspace
spelling	sg-nus-scholar.10635-842332015-01-06T20:55:23Z Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Du, A. Tung, C.-H. Samudra, G.S. Yoo, W.-J. Balasubramanian, N. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Digest of Technical Papers - Symposium on VLSI Technology 56-57 DTPTE 2014-10-07T04:50:19Z 2014-10-07T04:50:19Z 2006 Conference Paper Liow, T.-Y.,Tan, K.-M.,Lee, R.T.P.,Du, A.,Tung, C.-H.,Samudra, G.S.,Yoo, W.-J.,Balasubramanian, N.,Yeo, Y.-C. (2006). Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement. Digest of Technical Papers - Symposium on VLSI Technology : 56-57. ScholarBank@NUS Repository. 1424400058 07431562 http://scholarbank.nus.edu.sg/handle/10635/84233 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Digest of Technical Papers - Symposium on VLSI Technology
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Du, A. Tung, C.-H. Samudra, G.S. Yoo, W.-J. Balasubramanian, N. Yeo, Y.-C.
format	Conference or Workshop Item
author	Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Du, A. Tung, C.-H. Samudra, G.S. Yoo, W.-J. Balasubramanian, N. Yeo, Y.-C.
spellingShingle	Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Du, A. Tung, C.-H. Samudra, G.S. Yoo, W.-J. Balasubramanian, N. Yeo, Y.-C. Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
author_sort	Liow, T.-Y.
title	Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
title_short	Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
title_full	Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
title_fullStr	Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
title_full_unstemmed	Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
title_sort	strained n-channel finfets with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84233
_version_	1681089581000163328

Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement

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