Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement

Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement

Digest of Technical Papers - Symposium on VLSI Technology

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Bibliographic Details
Main Authors:	Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Du, A., Tung, C.-H., Samudra, G.S., Yoo, W.-J., Balasubramanian, N., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84233
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Institution:	National University of Singapore

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