High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

We report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET) on an advanced GeSn-on-insulator (GeSnOI) platform by complementary metal-oxide-semiconductor (CMOS) compatible processes. The detection rang...

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Bibliographic Details
Main Authors: Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2019
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Optoelectronics
Integrated Optics
Online Access:https://hdl.handle.net/10356/83638
http://hdl.handle.net/10220/47598
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/83638
http://hdl.handle.net/10220/47598

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