High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

We report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET) on an advanced GeSn-on-insulator (GeSnOI) platform by complementary metal-oxide-semiconductor (CMOS) compatible processes. The detection rang...

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Main Authors: Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2019
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Online Access:https://hdl.handle.net/10356/83638
http://hdl.handle.net/10220/47598
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-836382020-03-07T13:57:29Z High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform Wang, Wei Lei, Dian Huang, Yi-Chiau Lee, Kwang Hong Loke, Wan-Khai Dong, Yuan Xu, Shengqiang Tan, Chuan Seng Wang, Hong Yoon, Soon-Fatt Gong, Xiao Yeo, Yee-Chia School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Optoelectronics Integrated Optics We report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET) on an advanced GeSn-on-insulator (GeSnOI) platform by complementary metal-oxide-semiconductor (CMOS) compatible processes. The detection range of GeSn photodetector is extended beyond 2 µm, with responsivities of 0.39 and 0.10 A/W at 1550 nm and 2003 nm, respectively. Through the insertion of an ultrathin Al2O3 Schottky-barrier-enhancement layer, the dark current IDark of the GeSn photodetector is suppressed by more than 2 orders of magnitude. An impressive IDark of ~65 nA was achieved at an operating voltage of 1.0 V. A frequency response measurement reveals the achievement of a 3-dB bandwidth of ~1.4 GHz at an illumination wavelength of 2 µm. GeSn pFinFET with fin width (Wfin) scaled down to 15 nm was also fabricated on the GeSnOI platform, exhibiting a small subthreshold swing (S) of 93 mV/decade, a high drive current of 176 µA/µm, and good control of short channel effects (SCEs). This work paves the way for realizing compact, low-cost, and multi-functional GeSn-on-insulator opto-electronic integrated circuits. MOE (Min. of Education, S’pore) Published version 2019-01-31T06:40:43Z 2019-12-06T15:27:15Z 2019-01-31T06:40:43Z 2019-12-06T15:27:15Z 2018 Journal Article Wang, W., Lei, D., Huang, Y.-C., Lee, K. H., Loke, W.-K., Dong, Y., . . . Yeo, Y.-C. (2018). High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform. Optics Express, 26(8), 10305-. https://hdl.handle.net/10356/83638 http://hdl.handle.net/10220/47598 10.1364/OE.26.010305 en Optics Express © 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. 10 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
Optoelectronics
Integrated Optics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Optoelectronics
Integrated Optics
Wang, Wei
Lei, Dian
Huang, Yi-Chiau
Lee, Kwang Hong
Loke, Wan-Khai
Dong, Yuan
Xu, Shengqiang
Tan, Chuan Seng
Wang, Hong
Yoon, Soon-Fatt
Gong, Xiao
Yeo, Yee-Chia
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
description We report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET) on an advanced GeSn-on-insulator (GeSnOI) platform by complementary metal-oxide-semiconductor (CMOS) compatible processes. The detection range of GeSn photodetector is extended beyond 2 µm, with responsivities of 0.39 and 0.10 A/W at 1550 nm and 2003 nm, respectively. Through the insertion of an ultrathin Al2O3 Schottky-barrier-enhancement layer, the dark current IDark of the GeSn photodetector is suppressed by more than 2 orders of magnitude. An impressive IDark of ~65 nA was achieved at an operating voltage of 1.0 V. A frequency response measurement reveals the achievement of a 3-dB bandwidth of ~1.4 GHz at an illumination wavelength of 2 µm. GeSn pFinFET with fin width (Wfin) scaled down to 15 nm was also fabricated on the GeSnOI platform, exhibiting a small subthreshold swing (S) of 93 mV/decade, a high drive current of 176 µA/µm, and good control of short channel effects (SCEs). This work paves the way for realizing compact, low-cost, and multi-functional GeSn-on-insulator opto-electronic integrated circuits.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Wang, Wei
Lei, Dian
Huang, Yi-Chiau
Lee, Kwang Hong
Loke, Wan-Khai
Dong, Yuan
Xu, Shengqiang
Tan, Chuan Seng
Wang, Hong
Yoon, Soon-Fatt
Gong, Xiao
Yeo, Yee-Chia
format Article
author Wang, Wei
Lei, Dian
Huang, Yi-Chiau
Lee, Kwang Hong
Loke, Wan-Khai
Dong, Yuan
Xu, Shengqiang
Tan, Chuan Seng
Wang, Hong
Yoon, Soon-Fatt
Gong, Xiao
Yeo, Yee-Chia
author_sort Wang, Wei
title High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
title_short High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
title_full High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
title_fullStr High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
title_full_unstemmed High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
title_sort high-performance gesn photodetector and fin field-effect transistor (finfet) on an advanced gesn-on-insulator platform
publishDate 2019
url https://hdl.handle.net/10356/83638
http://hdl.handle.net/10220/47598
_version_ 1681035923145359360