GERMANIUM-TIN PHOTO DETECTORS FOR APPLICATIONS IN THE TWO MICRON WAVELENGTH RANGE

بواسطة XU SHENGQIANG
منشور في 2019

Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO

بواسطة Wang, Lin, Liao, Wugang, Xu, Shengqiang, Gong, Xiao, Zhu, Chunxiang, Ang, Kah-Wee
منشور في 2020

High-speed photo detection at two-micron-wavelength : technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate

بواسطة Xu, Shengqiang, Wang, Wei, Huang, Yi-Chiau, Dong, Yuan, Masudy-Panah, Saeid, Wang, Hong, Gong, Xiao, Yeo, Yee-Chia
منشور في 2019

A route toward high-detectivity and low-cost short-wave infrared photodetection: GeSn/Ge multiple-quantum-well photodetectors with a dielectric nanohole array metasurface

بواسطة Chen, Qimiao, Zhou, Hao, Xu, Shengqiang, Huang, Yi-Chiau, Wu, Shaoteng, Lee, Kwang Hong, Gong, Xiao, Tan, Chuan Seng
منشور في 2023

High-performance back-illuminated Ge₀.₉₂Sn₀.₀₈/Ge multiple-quantum-well photodetector on Si platform for SWIR detection

بواسطة Wu, Shaoteng, Xu, Shengqiang, Zhou, Hao, Jin, Yuhao, Chen, Qimiao, Huang, Yi-Chiau, Zhang, Lin, Gong, Xiao, Tan, Chuan Seng
منشور في 2021

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

بواسطة SAMANTA SUBHRANU, UMESH CHAND, XU SHENGQIANG, HAN KAIZHEN, WU YING, ANNIE KUMAR, LI YIDA, FONG XUANYAO, THEAN VOON YEW, AARON, GONG XIAO
منشور في 2021

Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width

بواسطة Kang, Yuye, Xu, Shengqiang, Han, Kaizhen, Kong, Eugene Y.-J., Song, Zhigang, Luo, Sheng, Kumar, Annie, Wang, Chengkuan, Fan, Weijun, Liang, Gengchiau, Gong, Xiao
منشور في 2022

GeSn lateral p-i-n photodetector on insulating substrate

بواسطة Xu, Shengqiang, Huang, Yi-Chiau, Lee, Kwang Hong, Wang, Wei, Dong, Yuan, Lei, Dian, Masudy-Panah, Saeid, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
منشور في 2019

Photo detection and modulation from 1,550 to 2,000 nm realized by GeSn/Ge multiple-quantum-well photodiode on 300-mm Si substrate

بواسطة Zhou, Hao, Xu, Shengqiang, Wu, Shaoteng, Huang, Yi-Chiau, Zhao, Peng, Tong, Jinchao, Son, Bongkwon, Guo, Xin, Zhang, Dao Hua, Gong, Xiao, Tan, Chuan Seng
منشور في 2020

High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm

بواسطة Zhou, Hao, Xu, Shengqiang, Lin, Yiding, Huang, Yi-Chiau, Son, Bongkwon, Chen, Qimiao, Guo, Xin, Lee, Kwang Hong, Goh, Simon Chun-Kiat, Gong, Xiao, Tan, Chuan Seng
منشور في 2020

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

بواسطة Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia
منشور في 2019

Strain relaxation of germanium-tin (GeSn) fins

بواسطة Kang, Yuye, Huang, Yi-Chiau, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Masudy-Panah, Saeid, Dong, Yuan, Wu, Ying, Xu, Shengqiang, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
منشور في 2018

Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate

بواسطة Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
منشور في 2020

GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting

بواسطة Zhou, Jie, Wang, Haibo, Huang, Po Rei, Xu, Shengqiang, Liu, Yang, Gong, Jiarui, Shen, Jianping, Vicent, Daniel, Haessly, Samuel, Abrand, Alireza, Mohseni, Parsian K., Kim, Munho, Yu, Shui-Qing, Chang, Guo-En, Gong, Xiao, Ma, Zhenqiang
منشور في 2024