Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks

by Burt, Daniel, Joo, Hyo-Jun, Jung, Yongduck, Kim, Youngmin, Chen, Melvina, Huang, Yi-Chiau, Nam, Donguk
Published 2022

High-speed photo detection at two-micron-wavelength : technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate

by Xu, Shengqiang, Wang, Wei, Huang, Yi-Chiau, Dong, Yuan, Masudy-Panah, Saeid, Wang, Hong, Gong, Xiao, Yeo, Yee-Chia
Published 2019

A route toward high-detectivity and low-cost short-wave infrared photodetection: GeSn/Ge multiple-quantum-well photodetectors with a dielectric nanohole array metasurface

by Chen, Qimiao, Zhou, Hao, Xu, Shengqiang, Huang, Yi-Chiau, Wu, Shaoteng, Lee, Kwang Hong, Gong, Xiao, Tan, Chuan Seng
Published 2023

High-performance back-illuminated Ge₀.₉₂Sn₀.₀₈/Ge multiple-quantum-well photodetector on Si platform for SWIR detection

by Wu, Shaoteng, Xu, Shengqiang, Zhou, Hao, Jin, Yuhao, Chen, Qimiao, Huang, Yi-Chiau, Zhang, Lin, Gong, Xiao, Tan, Chuan Seng
Published 2021

Single-crystalline Ge₁₋ₓSnₓ/Si p–n heterojunction photodiodes with Sn compositions up to 10%

by An, Shu, Huang, Yi-Chiau, Wu, Chen-Ying, Huang, Po-Rei, Chang, Guo-En, Lai, Junyu, Seo, Jung-Hun, Kim, Munho
Published 2023

Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate

by Wu, Shaoteng, Zhang, Lin, Wan, Rongqiao, Zhou, Hao, Lee, Kwang Hong, Chen, Qimiao, Huang, Yi-Chiau, Gong, Xiao, Tan, Chuan Seng
Published 2023

GeSn lateral p-i-n photodetector on insulating substrate

by Xu, Shengqiang, Huang, Yi-Chiau, Lee, Kwang Hong, Wang, Wei, Dong, Yuan, Lei, Dian, Masudy-Panah, Saeid, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published 2019

Photo detection and modulation from 1,550 to 2,000 nm realized by GeSn/Ge multiple-quantum-well photodiode on 300-mm Si substrate

by Zhou, Hao, Xu, Shengqiang, Wu, Shaoteng, Huang, Yi-Chiau, Zhao, Peng, Tong, Jinchao, Son, Bongkwon, Guo, Xin, Zhang, Dao Hua, Gong, Xiao, Tan, Chuan Seng
Published 2020

High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm

by Zhou, Hao, Xu, Shengqiang, Lin, Yiding, Huang, Yi-Chiau, Son, Bongkwon, Chen, Qimiao, Guo, Xin, Lee, Kwang Hong, Goh, Simon Chun-Kiat, Gong, Xiao, Tan, Chuan Seng
Published 2020

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

by Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia
Published 2019

GeSn/Ge multiquantum-well vertical-cavity surface-emitting p-i-n structures and diode emitters on a 200 mm Ge-on-insulator platform

by Chen, Qimiao, Jung, Yongduck, Zhou, Hao, Wu, Shaoteng, Gong, Xiao, Huang, Yi-Chiau, Lee, Kwang Hong, Zhang, Lin, Nam, Donguk, Liu, Jian, Luo, Jun-Wei, Fan, Weijun, Tan, Chuan Seng
Published 2023

Strain relaxation of germanium-tin (GeSn) fins

by Kang, Yuye, Huang, Yi-Chiau, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Masudy-Panah, Saeid, Dong, Yuan, Wu, Ying, Xu, Shengqiang, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published 2018

Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate

by Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published 2020

Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain

by Burt, Daniel, Joo, Hyo-Jun, Kim, Youngmin, Jung, Yongduck, Chen, Melvina, Luo, Manlin, Kang, Dong-Ho, Assali, Simone, Zhang, Lin, Son, Bongkwon, Fan, Weijun, Moutanabbir, Oussama, Ikonic, Zoran, Tan, Chuan Seng, Huang, Yi-Chiau, Nam, Donguk
Published 2022